Scanning tunnelling microscopy was used to study the morphology of the Ti/(110)GaAs interface for atom deposition at 300K. The results indicated that thermally activated surface diffusion was minimal during the growth process. This was because of the high activation energy which was imposed by chemical bonding. On the other hand, surface hopping was observed because of the dynamics which were associated with the cooling of impinging atoms. It was noted that single Ti atoms formed stable bonds with the substrate, but unique bonding sites were not distinguishable and the areas around these sites were not disrupted.

Y.N.Yang, B.M.Trafas, Y.S.Luo, R.L.Siefert, J.H.Weaver: Physical Review B, 1991, 44[11], 5720-5