The surface diffusion of group-III atom incorporation during molecular beam epitaxial growth was considered. Firstly, the diffusion length for incorporation on the (001) top surface, with (111)A or (411)A side surfaces on V grooves, was studied. It was shown that the diffusion length took the same value for both cases and was inversely proportional to the As pressure. However, the diffusion length of Ga on (111)B exhibited an inverse parabolic dependence of the As pressure. It was suggested that, on the (001) surface, two As4 molecules met to furnish active As atoms for growth. On the other hand, the behavior of the As4 molecule on the (111)B surface remained unclear. The ratio of the surface diffusion coefficients on (111)B and (001) was calculated. It was found that the ratio took a value of about 140. Using this ratio, the incorporation lifetimes on (111)B and (001) surfaces were calculated as functions of the As pressure. It was found that the curves of incorporation lifetime intersected at the As pressure where flow inversion occurred.

T.Nishinaga, X.Q.Shen, D.Kishimoto: Journal of Crystal Growth, 1996, 163[1], 60-6