Scanning tunnelling microscopy-induced vacancy migration on (110) was shown to result from the trapping of minority carriers in dangling-bond defect states. The energy which was released when an electron fell into an As vacancy level on p-type material, or when a hole fell into a Ga vacancy level on n-type material, was sufficient to account for the observed migration. Other alternatives were ruled out by the experimental data and by theoretical considerations. It was suggested that the general concept, that carrier capture could promote atomic motion, might also apply to other systems with localized levels.

G.Lengel, M.Weimer, J.Gryko, R.E.Allen: Journal of Vacuum Science and Technology B, 1995, 13[3], 1144-9