Step motion and structural transitions on (001) surfaces were observed directly by means of scanning tunnelling microscopy at high temperatures. A stable 2 x 4 structure was observed on the InAs surface; even at temperatures which were high enough to cause the motion of monomolecular steps and kinks. At higher temperatures, domains with an In stable 4 x 2 structure (As-desorbed region) were clearly observed, surrounded by As stable 2 x 4 structures. These results differed from those for GaAs, and indicated the occurrence of strong lateral interactions in 2 x 4 structures on InAs.

H.Yamaguchi, Y.Horikoshi: Japanese Journal of Applied Physics 1, 1994, 33[1B], 716-20