Growth via atomic layer epitaxy, using tertiarybutylarsine and triethylgallium in a chemical beam epitaxy system, was studied. A stable 4 x 8 surface reconstruction was observed after Ga deposition at low substrate temperatures, in the absence of a tertiarybutylarsine flux. The triethylgallium reaction rate at the sample surface was found to be lower under atomic layer epitaxial conditions than under chemical beam epitaxial growth conditions. No decay in the reflection high-energy electron diffraction intensity was observed after the atomic layer epitaxial growth of 700 monolayers of GaAs at 550C.

M.Aït-Lhouss, J.L.Castaño, B.J.García, J.Piqueras: Journal of Applied Physics, 1995, 78[9], 5834-6