Reconstruction of (001) during organometallic chemical vapor deposition was investigated by using reflectance-difference spectroscopy. The spectra revealed that surface reconstructions, which were similar to the (4 x 2), (2 x 4), and c(4 x 4) reconstructions that occurred on surfaces which were prepared by molecular beam epitaxy under ultra-high vacuum, occurred even under atmospheric pressure. The structure of surfaces which had been prepared using static or dynamic conditions under non ultra-high vacuum conditions was studied. It was found that, in contrast to previous models, that the surfaces which were prepared under these conditions exhibited dimer formation. Organometallic chemical vapor deposition and atomic layer epitaxy typically occurred under disordered c(4 x 4)[d(4 x 4)]-like conditions where the surface was terminated by multi-layers of As. When trimethylgallium and arsine were supplied simultaneously, the surface structure varied as a function of the supply rates, of these sources, and of the substrate temperature.

I.Kamiya, D.E.Aspnes, H.T.Tanaka, L.T.Florez, M.A.Koza, R.Bhat, J.P.Harbison: Philosophical Transactions of the Royal Society A, 1993, 344[1673], 443-52