The lateral profiles of In in a 1.5-thick Ga1-xInxAs layers, where x was approximately equal to 0.2, were grown onto GaAs channelled substrates with (411)A side-slopes by the use of molecular beam epitaxy and were investigated with the use of energy-dispersive X-ray spectroscopy. The observed profiles of the In content suggested that the In atoms migrated preferentially in the [12¯2¯] direction on the (411)A plane during molecular beam epitaxial growth. This preferential migration of In atoms was confirmed by comparing the observed lateral profiles of In in GaInAs layers which had been grown onto GaAs channelled substrates with simulated In profiles that had been calculated by taking account of an additional one-way flow of In atoms along [12¯2¯].

T.Kitada, A.Wakejima, N.Tomita, S.Shimomura, A.Adachi, N.Sano, S.Hiyamizu: Journal of Crystal Growth, 1995, 150[1-4], 487-91