Interface formation in Ga 1-xInxSb/InAs strained-layer systems on (100) GaSb substrates, where x was less than 0.4, was studied by means of reflection high-energy electron diffractometry during molecular beam epitaxial growth. A 1 x 3 phase from the InAs epilayer surface, and a 2 x 3 phase, a 2 x 4 phase, and diffuse (1 x 1)-like phases from the InAs epilayer surface, were observed.

W.C.Fan, J.T.Zborowski, T.D.Golding, H.D.Shih: Journal of Applied Physics, 1992, 71[5], 2249-52