Clean and In-covered (103) surfaces were studied by using scanning tunnelling microscopic, electron diffraction, and photo-emission techniques. At room temperature, the clean surface exhibited a well-ordered (4 x 1) reconstruction. Upon heating to about 430C, it underwent a reversible, (4 x 1)  (1 x 1), phase transition. Atomically resolved scanning tunneling microscopic images indicated that the (4 x 1) reconstruction involved 2 atomic layers. After depositing 2 monolayers of In, and annealing at 150C, the (4 x 1) reconstruction was removed and a (1 x 1) structure formed which could be described as being an In-terminated ideal (103) surface with In atoms saturating all of the Ge surface dangling bonds.

L.Seehofer, G.Falkenberg, R.L.Johnson: Physical Review B, 1996, 54[16], R11062-5