The c(4 x 2) reconstruction of (100) was investigated by using Si 2p core-level photo-emission spectroscopy and synchrotron radiation. Two surface-shifted components were identified that were related to the up and down dimers of the c(4 x 2) reconstruction. A large binding energy difference (0.9eV) between these 2 surface-shifted components indicated that the up and down dimers had significantly different electronic status. Two sub-surface components, with one of them having a large bulk-like nature, were also identified. This indicated that the sub-surface region was also significantly affected by stress, far from the outer surface, thus suggesting a long-range influence of the latter.

Core-Level Photoemission Spectroscopy of the β-SiC(100)-c(4 x 2) Surface V.Y.Aristov, H.Enriquez, V.Derycke, P.Soukiassian, G.Le Lay, C.Grupp, A.Taleb-Ibrahimi: Physical Review B, 1999, 60[24], 16553-7