The electron energy dependence of electron beam doping (super-diffusion) at about 50C was investigated. It was found that the electron energy dependences of the predicted displaced atom concentrations in semiconductors were in good agreement with experimental ones for impurities. It was suggested that the effect of surface diffusion was important. Auger electron spectroscopic Ge signals from a 3-layer Si/Ge/Si array (Si surfaces contacting both surfaces of a Ge wafer) appeared after electron irradiation. In the case of Si||Ge||Si arrays (where || indicated a gap of about 1mm), such a signal was not detected.

T.Wada, K.Yasuda, H.Fujimoto, H.Masuda: Materials Science Forum, 1995, 196-201, 1619-24