Second harmonic microscopy was used to study In diffusion on (111) surfaces. It was found that, for homologous temperatures that were near to 0.5 and coverages ranging from 0 to 0.7, the In diffusivity (table 4) could be described by:

D (cm2/s) = 3000 exp[-42(kcal/mol)/RT]

The values of the Arrhenius parameters, which were quite large, were explained semi-quantitatively in terms of an adatom-vacancy model which had been developed for similar systems. The present work offered considerable evidence for the effects of adatom-vacancy ionization.

C.E.Allen, R.Ditchfield, E.G.Seebauer: Journal of Vacuum Science and Technology A, 1996, 14[1], 22-9

Table 4

Diffusivity of In on the (111) Surface of Si