A study was made of the energies which were required for the ejection of Si atoms and SiCl molecules from defect sites on Si(100) and (110) surfaces (including adatoms, kinks and vacancies); with and without interaction with Cl adsorbates. It was found that the energies which were necessary for the emission of Si atoms from defect sites were lower than those for the perfect site and were almost proportional to the coordination number for the Si(110) surface. It was also found that the interaction of Cl with defects reduced the energy that was required for the ejection of a Si atom and a SiCl molecule; depending upon the adsorption site.

G.S.Khoo, C.K.Ong, N.Itoh, J.Kanasaki: Journal of Applied Physics, 1994, 75[1], 255-8