Interfacial defects between p-type epitaxial layers and p-type substrates were studied by means of deep-level transient spectroscopy. By solving Poisson's equation, the electron concentration at the defect level was derived as a function of the external voltage. The emission and capture of electrons at the defect level, which was not observable using conventional deep-level transient spectroscopy, could be detected simultaneously (using a single temperature scan) by suitably choosing the experimental parameters. The results showed that the energy level of the interfacial defects was located at Ec-0.30eV.

F.Lu, D.Gong, H.Sun, X.Wang: Journal of Applied Physics, 1995, 77[1], 213-7