The adsorption of Ga at the H-terminated (100)-2 x 1 surface was investigated by means of scanning tunnelling microscopy. It was found that the thermally deposited Ga atoms were absorbed preferentially at H-missing dangling bonds and at surface impurities. The H atoms were desorbed by using the scanning tunnelling microscope, and atomic-scale dangling-bond wires were fabricated. In order to prepare such structures, several methods for detaching, attaching and moving individual H atoms were tested. It was found to be possible to deposit Ga atoms onto a dangling-bond wire and fabricate an atomic-scale Ga wire on the surface.

T.Hashizume, S.Heike, M.I.Lutwyche, S.Watanabe, K.Nakajima, T.Nishi, Y.Wada: Japanese Journal of Applied Physics 2, 1996, 35[8B], L1085-8