An investigation was made of the photoluminescence quenching of porous material in various atmospheres or in a vacuum. A much faster quenching was observed, under vacuum, than had previously been reported. This was attributed to differences in the structures of p-type and n-type porous Si, or to re-reaction with electrolyte vapor. It was noted that the luminescence intensity partially recovered, in a H atmosphere, to up to 10% of its initial value. It was suggested that this was associated with the stabilization of surface dangling bonds. When the H atmosphere was exchanged for normal air, the photoluminescence intensity began to decrease again, due to oxidation.

J.Salonen, E.Laine: Journal of Applied Physics, 1996, 80[10], 5984-5