The behavior of a (100) surface defect which was introduced by deliberate Cu contamination was studied by means of transmission electron microscopy. After annealing (1150C, 1h, N2 atmosphere), colony precipitates which lay along (110) planes were observed only on the surface of the wafer. From selected area diffraction patterns, these precipitates were deduced to be Cu6Si-type silicides. During additional annealing in an oxidizing atmosphere, stacking faults were formed from each colony precipitate. This indicated that colony precipitates were the nuclei of oxidation-induced stacking faults.

S.Sadamitsu, S.Sumita, N.Fujino, T.Shiraiwa: Japanese Journal of Applied Physics, 1988, 27[10], L1819-21