The damage which was generated in diffusion layers on wafer surfaces, during exposure to an O plasma, was studied. After exposure to the plasma, an increase in sheet resistance was commonly observed in the case of B-, Ga- and Al-implanted surfaces. An increase in the yield of channelled spectra during Rutherford back-scattering spectrometry also occurred, thus indicating the formation of lattice defects that could act as hole trap levels. An experiment which was carried out using various doses suggested that the hole trap concentration was independent of the initial carrier concentration.

M.Furukawa, H.Suzuki, T.Hara: Journal of the Electrochemical Society, 1991, 138[2], 542-4