It was recalled that changes in the nucleation and phase formation sequence with temperature could markedly affect the final morphology. The Si(111)-(3 x 3)Ag structure developed directly from the clean (7 x 7) structure at 500 to 700K. Preferred nucleation at step-edges and (7 x 7) domain boundaries reduced the effective dimensionality of the substrate and explained some anomalies in domain-size scaling which had been reported. An intermediate 3-domain (3 x 1) structure preceded the 3 structure at higher temperatures; leading to a complete change in 3 nucleation and growth, as well in the final domain size distribution and total Ag coverage.

A.W.Denier van der Gon, R.M.Tromp: Physical Review Letters, 1992, 69[24], 3519-22