It was shown that domains of reconstructed Si surfaces could be imaged by means of secondary electrons, using an ultra-high vacuum scanning electron microscope with a secondary electron detector which permitted angular resolvability. The secondary electron images clearly revealed a double-domain structure of alternating 2 x 1 and 1 x 2 domains on Si(100), as well as coexisting reconstructed 7 x 7 domains and non-reconstructed 1 x 1 domains on Si(111). The results demonstrated that the secondary electron emission was sensitive to the atomic configuration of the uppermost layers.

Y.Homma, M.Suzuki, M.Tomita: Applied Physics Letters, 1993, 62[25], 3276-8