The growth of (001) material via gas-source molecular beam epitaxy involving Si2H6 was investigated, and surface reconstruction was studied at temperatures of between 100 and 775C. Surface reconstructions of 2 x 2 and c(4 x 4) type were observed during growth at about 645C. Growth was initiated by the formation of 3-dimensional islands which coalesced at substrate temperatures above 600C. Growth then continued in a two-dimensional manner. It was found that the Si surface underwent a series of reconstructions which was related to the number of H adatoms and Si dimers which covered the surface.

S.M.Mokler, W.K.Liu, N.Ohtani, B.A.Joyce: Applied Physics Letters, 1991, 59[26], 3419-21