Growth steps and etch pits were observed on the (100)-type planes of crystals which had been prepared by using the C2H2-O2 flame-deposition method. The growth steps and the edges of etch pits were both parallel to [110]-type directions. This observation was in good agreement with the 2 x 1 surface reconstruction hypothesis. It was suggested that the surface dangling bonds were not terminated by H under these growth conditions.

K.Okada, S.Komatsu, S.Matsumoto, Y.Moriyoshi: Journal of Crystal Growth, 1991, 108[1-4], 416-20