The kinetics of 6H {00•1} surfaces during the chemical vapor deposition of SiC at 1200 to 1600C were studied. On the basis of a simple model, the surface diffusion lengths were estimated from the lateral growth rates of macro-steps. No significant difference in surface diffusion length was observed on the Si and C faces. The diffusion length decreased with decreasing growth temperature. This decrease was attributed to suppressed surface diffusion and to an enhanced incorporation of the migrating species into growth nuclei; whose number increased significantly at low temperatures.

T.Kimoto, H.Matsunami: Journal of Applied Physics, 1995, 78[5], 3132-7