Single-domain (100)-(3 x 2) surfaces (Si-rich) of the -phase were studied by means of atom-resolved scanning tunnelling microscopy. High-quality flat surfaces with a low defect density were grown, with the identification of individual Si atoms and dimers. It was found that the Si-Si dimers formed rows, that were perpendicular to the dimer direction, in a (3 x 2) arrangement. Clear signs were found for the existence of asymmetrical dimers that were all tilted in the same direction; rather than being anti-correlated. Several types of defect were identified, including missing dimers and dimer pairs. Added Si grew epitaxially, with the formation of 2-dimensional islands that exhibited the (3 x 2) reconstruction.

F.Semond, P.Soukiassian, A.Mayne, G.Dujardin, L.Douillard, C.Jaussaud: Physical Review Letters, 1996, 77[10], 2013-7