It was pointed out that low-noise total integrated scattering was a versatile tool for quantitative ensemble average analyses, of hillock formation in thin metal films, over areas of up to 1mm2. It provided an efficient means for non-contact studies of processes which affected thin-film roughness. As an example, Al films on Si wafers, heated from 40 to 220C, were analysed in real time. A marked onset of hillock formation was found at about 75C, and rapid annealing showed that hillock formation took place over the time scale of a few minutes.

L.Mattsson, Y.H.Le Page, F.Ericson: Thin Solid Films, 1991, 198[1-2], 149-56