It was found that the reaction of Ti3SiC2 with monocrystalline Si wafers, at temperatures ranging from 1200 to 1350C, resulted in the formation of a dense surface layer that comprised a 2-phase mixture of TiSi2 and SiC. This layer grew as an outer layer with fine (1 to 5μ) SiC particles and inner coarser (10 to 15μ) ones. The overall growth rates of the layers were parabolic. A comparison with previously published results supported the conclusion that the diffusion of Si through TiSi2 was rate-limiting. At temperatures ranging from 1400 to 1600C, the reaction of Ti3SiC2 with graphite foils resulted in the formation of a 15vol% porous surface layer of TiCx, where x was greater than 0.8. It was shown that the carburization rate was limited by the diffusion of C through TiCx.

T.El-Raghy, M.W.Barsoum: Journal of Applied Physics, 1998, 83[1], 112-9