Photoluminescence data, on amorphous samples, in the spectral range of the α (4.3eV), β (3.1eV) and γ (2.7eV) emissions - as excited using synchrotron radiation - were reported. Neutron irradiation gave rise to photoluminescence features which were distinct from those observed in either non-irradiated Ge-doped silica or in samples which contained other impurities. The present data suggested that the defect-formation processes determined the various photoluminescence patterns which were observed, and that the usually cited distinction between Si-like and Ge-like centers was irrelevant.

F.Meinardi, A.Paleari: Physical Review B, 1998, 58[7], 3511-4