Two photoluminescence bands were detected from Si+-implanted films after rapid thermal annealing at temperatures above 950C. The photoluminescence band at 2.2eV was obtained after rapid thermal annealing in dry N, and the other one (1.9eV) was obtained after rapid thermal annealing in wet N. The luminescence at 2.2eV disappeared when the films were re-annealed in an electric oven at temperatures above 600C. This was similar to the behavior of O-deficient and H-deficient structures, and this photoluminescence band was therefore attributed to the Eδ' center. The 1.9eV band, being closely related to Si-O-H structures and persisting after re-annealing at up to 800C, was attributed to the effect of non-bridging O hole centers.

S.T.Chou, J.H.Tsai, B.C.Sheu: Journal of Applied Physics, 1998, 83[10], 5394-8