A study was made of the organometallic vapor-phase lateral epitaxy and coalescence of GaN layers which originated from GaN stripes that had been deposited within 3μ-wide windows, spaced 3μ apart, and contained within SiO2 masks on GaN/AlN/6H-SiC(00•1) substrates. The extent, and microstructural characteristics, of the lateral overgrowth were strong functions of the stripe orientation. A high density of threading dislocations, which originated from the interface of the underlying GaN with the AlN buffer layer, was present in GaN which was grown in the window regions. On the other hand, the overgrowth regions contained a very low density of dislocations.

O.H.Nam, M.D.Bremser, T.S.Zheleva, R.F.Davis: Applied Physics Letters, 1997, 71[18], 2638-40