By using Auger electron spectroscopy and reflection high-energy electron diffraction methods, it was shown that Si impurities affected the (110) surface structure. It was found that Si prevented formation of the 1 x 3 structure, and stabilized the 1 x 2 structure. The adsorption and desorption behavior of O was also changed by the presence of Si.

W.Hetterich, U.Korte, G.Meyer-Ehmsen, W.Heiland: Surface Science Letters, 1991, 254[1-3], L487-90