Defects on the (011)-type surfaces of a single crystal were imaged at between 3 and 16eV by using low-energy electron microscopy. Linear slip traces appeared predominantly along the [100]-, [133]-, [111]- and [011]-type directions after quenching the crystal from 2000K. The crystallographic slip was typically of only one atomic step distance. The slip traces were modified by migration of the atomic steps, thus producing complex defect structures. Screw dislocations which marked a twist boundary were also observed. The possibility of using low-energy electron microscopy for the imaging of defects on surfaces which were one atomic step in height was demonstrated.

M.Mundschau, E.Bauer, W.Swiech: Philosophical Magazine A, 1989, 59[2], 217-26