The distribution of defects in (100), (110) and (111) samples after B implantation and annealing was measured. The B implantation was carried out at 300K using various energies (50, 150, and 300keV or 30, 90, and 180keV) so as to obtain an homogeneously damaged layer. The fluences ranged from 1014 to 1016/cm2. The profile of vacancy-type defects was deduced by means of variable energy positron annihilation spectroscopy. The defect concentration increased as the square root of the ion fluence. It was found that the line-shape parameter of the positron-electron annihilation peak in the implanted layer increased directly with the fluence. The divacancy concentration which was observed by using infra-red absorption spectroscopy was almost constant (at about 1.8 x 1019/cm3) in all of the samples. It was concluded that divacancies were not the main vacancy-type defects, and that the increasing line-shape parameter had to be attributed to additional defects of greater open volume. The defect/bulk ratio of the line-shape parameters was equal to 1.048 for the predominant defect. The equivalent ratio for the divacancy was 1.04. Rutherford back-scattering measurements were used to detect the distribution of displaced lattice atoms. The defect-production rate was again proportional to the square root of the fluence. The concentration profiles of implanted ions were deduced by using sputtered neutral mass spectrometry. In addition, Monte Carlo calculations were performed. The nearly homogenous defect distributions to a depth of up to 1μ, which were found by means of simulation and Rutherford back-scattering spectroscopy, were in very good agreement. The samples were annealed at up to 1150K, and it was found that the annealing behavior of vacancy-like defects depended upon the implantation dose and upon the material type. The divacancies annealed out at 470K. An annealing stage of vacancy clusters, at 725K, was observed in all samples. In Czochralski-type material, a decrease in the line-shape parameter below the value of defect-free material was observed after annealing at about 750K. This was attributed to the appearance of a different defect; probably an O-vacancy complex. At high fluences (1016/cm2), an increase in the line-shape parameter above the defect value at room temperature was observed, after annealing at 700K, in a region that was 100nm below the surface. This high line-shape parameter was caused by the creation of larger vacancy clusters. These defects remained stable after annealing at 850K.

S.Eichler, J.Gebauer, F.Börner, A.Polity, R.Krause-Rehberg, E.Wendler, B.Weber, W.Wesch, H.Börner: Physical Review B, 1997, 56[3], 1393-403