Various elements were diffused into a superlattice structure at temperatures of between 700 and 1000C. Their disordering effect upon the superlattice was assessed by using a small-angle polishing method. It was found that Mn induced disordering of the superlattice. However, the disordering effect which arose from Mn diffusion could be entirely inhibited if the fraction of As in the diffusion source were considerably higher than that of Mn. This inhibition effect was related to the formation of MnAs or MnAs2. This left very little Mn, in the vapor phase, which was available for diffusion. The results were explained in terms of the interstitial-substitutional mechanism, and of the solubility of the given dopant in GaAs.

H.P.Ho, I.Harrison, N.Baba-Ali, B.Tuck, M.Henini: Journal of Electronic Materials, 1991, 20[9], 649-52