The effect of an As pressure upon the disordering effect of Zn diffusion into superlattices was studied. It was found that the degree of disordering increased when no excess As was added to the ampoule. It had previously been found that dislocation loops formed near to the Zn diffusion front. The same effect was observed here, except when Zn diffusion was carried out in the absence of excess As. The Zn penetration was found to be greatest when no excess As was added to the diffusion ampoule.

I.Harrison, H.P.Ho, B.Tuck, M.Henini, O.H.Hughes: Semiconductor Science and Technology, 1990, 5[6], 561-5