A study was made of reflection high-energy electron diffraction specular-beam intensity oscillations on vicinal (001)AlAs which had been grown onto GaAs(001) substrates that were misoriented by 2 or 3 towards [110], [010], or [¯110]. It was found that the temperature dependence of the oscillation behavior on vicinal surfaces was similar to that on GaAs(001) and InAs(001). Contrary to the case of GaAs(001), however, the surface reconstruction could not be kept constant during the growth-mode transition and it was therefore difficult to analyze AlAs(001) data in as much detail as that for GaAs(001). Nevertheless, from the similarity between them it was estimated that the effective surface migration barrier for Al adatoms on AlAs(001) was about 1.74eV.

T.Shitara, J.H.Neave, B.A.Joyce: Applied Physics Letters, 1993, 62[14], 1658-60