The dopant-induced intermixing of Al and Ga in as-grown short-period superlattices was studied by means of atomic resolution cross-sectional scanning tunnelling microscopy. In the case of Si-doped n-type AlAs/GaAs short-period superlattices, the intermixing increased with increasing Si concentration (0 to 5 x 1018/cm3). In the case of Be-doped p-type AlAs/GaAs short-period superlattices, no intermixing of Al and Ga was observed; regardless of the Be concentration (0 to 5 x 1018/cm3).

J.F.Zheng, M.Salmeron, E.R.Weber: Solid State Communications, 1995, 93[5], 419-23