A close relationship between Be surface segregation and diffusion, in molecular beam epitaxial AlGaAs layers which were heavily doped with Be, was analyzed within the framework of a thermodynamic approach to segregation effects.. The effect of growth parameters (excess As pressure, substrate temperature, growth rate) and dopant level upon the likelihood of Be segregation layer formation was considered.

S.V.Ivanov, P.S.Kopev, N.N.Ledentsov: Journal of Crystal Growth, 1991, 108[3-4], 661-9