The suppression of Be diffusion in molecular beam epitaxial Ga0.9Al0.1As was reported here for the first time. It was achieved by incorporating In into the epilayer. The minimum Be diffusion coefficient in In-doped layers with a carrier concentration of 7 x 1019/cm3 and an InAs mole fraction of 0.07, which had been grown at 600C, was equal to about 2 x 10-15cm2/s. This value was 5 times smaller than that which was observed in the absence of In. The photoluminescence intensity of the layers decreased markedly in Inx(Al,Ga)1-x when x was greater than 0.05. This behavior was attributed to a crystal degradation which resulted from the presence of misfit dislocations.

T.Fujii, T.Tomioka, H.Ishikawa, S.Sasa, A.Endoh, Y.Bamba, K.Ishii, Y.Kataoka: Journal of Vacuum Science and Technology B, 1990, 8[2], 154-6