It was pointed out that the characteristic features of Be diffusion in GaAs substrates and GaAs/AlGaAs superlattices could be explained in terms of a kick-out mechanism in which the doubly positively charged Ga self-interstitial governed Ga self-diffusion. Such characteristics included much lower diffusivities of Be under out-diffusion conditions than under in-diffusion conditions. It was found that the Longini mechanism was able to explain most of the features.

S.Yu, T.Y.Tan, U.Gösele: Journal of Applied Physics, 1991, 69[6], 3547-65