The diffusion of D in Si-doped AlxGa1-xAs was studied for x-values of up to 0.30. It was found that, for x = 0, the diffusion profile could be closely fitted by using an erfc function. When the x-value was greater than 0.055, the profiles exhibited a plateau that was followed by a sharp decrease. It was suggested that, in Si-doped samples, the D behaved like a deep acceptor with a level, H-/0, which was slightly resonant in the conduction band of GaAs. It appeared as a localized state, for x-values above 0.07, as the band-gap energy increased. In this region, the H- species became dominant and were trapped on the positively charged donors during diffusion.

J.Chevallier, B.Machayekhi, C.M.Grattepain, R.Rahbi, B.Theys: Physical Review B, 1992, 45[15], 8803-6