It was pointed out that the characteristic features of Be and Zn diffusion in GaAs substrates and GaAs/AlGaAs superlattices could be explained in terms of a kick-out mechanism in which the doubly positively charged Ga self-interstitial governed Ga self-diffusion. It was found that the Longini mechanism was able to explain most of these features. However, the predictions of the Longini mechanism with regard to Ga self-diffusion disagreed with experimental observations of the effect of superlattice disordering.

S.Yu, T.Y.Tan, U.Gösele: Journal of Applied Physics, 1991, 69[6], 3547-65