Layer samples were diffused, at 785C, with Mg from an As-saturated Ga solution that contained 0.1wt%Mg. Secondary ion mass spectrometry and differential Hall effect measurements revealed that the depth profile consisted of a high-Mg concentration region close to the surface, and a lower-concentration plateau within the sample. The diffusion of Mg into GaAs, Al0.5Ga0.5As and Al0.7Ga0.3As for 0.33h resulted in diffusion fronts at about 0.002, 0.004 and 0.006mm from the surface, respectively. The depth, for a fixed hole concentration, was proportional to the square root of the diffusion time in both GaAs and Ga0.65Al0.35As.

S.Mukai, Y.Kaneko, T.Nukui, M.Mori, M.Watanabe, H.Itoh, H.Yajima: Japanese Journal of Applied Physics, 1989, 28[1], L1-3