Paper eintragenAn investigation was made of dual Mg/F or Mg/Ar implantation. It was found that the dual implantation suppressed Mg diffusion, but degraded the electrical properties. This was more apparent in material with lower Al contents. The Ar dual implantation suppressed Mg diffusion and improved the electrical properties of material with a high Al content. It was suggested that Mg-F bonds formed as a result of F dual implantation and that successive annealing suppressed Mg diffusion and disturbed Mg activation. The extensive radiation damage which was caused by Ar dual implantation caused Mg atoms to occupy lattice sites in AlGaAs with a high Al content.

N.Hara, H.Suehiro, S.Kuroda: Materials Science Forum, 1995, 196-201, 1943-8