Data were presented which demonstrated that the surface encapsulant and As4 over-pressure strongly affected Si diffusion in AlxGa1-xAs, and were important parameters in impurity-induced layer disordering. An increase in the As4 over-pressure resulted in a decrease in the diffusion depth for AlxGa1-xAs. In addition, the band-edge exciton was observed in absorption on an AlxGa1-xAs-GaAs superlattice that was diffused with Si and was converted to bulk crystal AlyGa1-yAs via impurity-induced layer disordering. The data indicated that the Si diffusion process and the properties of the diffused material were different for GaAs and AlxGa1-xAs-GaAs superlattices which were converted into uniform AlyGa1-yAs (where y was between 0 and 1) via impurity-induced layer disordering with amphoteric dopant Si.

L.J.Guido, W.E.Plano, D.W.Nam, N.Holonyak, J.E.Baker, R.D.Burnham, P.Gavrilovic: Journal of Electronic Materials, 1988, 17[1], 53-6