The migration of Si into AlxGa1-xAs from a sputtered Si film was described, where x ranged from 0 to 0.4. It was shown that both the diffusion rate and the surface Si concentration decreased with increasing Al mole fraction. The diffusion behavior of Si was explained in terms of the binding energy of the Al-As bond and of the disorder of the mixed crystal.

E.Omura, X.S.Wu, G.A.Vawter, E.L.Hu, L.A.Coldren, J.L.Merz: Applied Physics Letters, 1987, 50[5], 265-6