Data were presented which showed that dislocations and Si diffusion promoted accelerated layer disordering of quantum well heterostructures which were grown on GaAs/Si substrates by metalorganic chemical vapor deposition. The accelerated impurity-induced layer disordering was more extreme at temperatures greater than 900C, and was virtually non-existent at temperatures below 775C.

W.E.Plano, D.W.Nam, K.C.Hsieh, L.J.Guido, F.A.Kish, A.R.Sugg, N.Holonyak, R.J.Matyi, H.Shichijo: Applied Physics Letters, 1989, 55[19], 1993-5