Data were presented on the disordering of an AlGaAs/GaAs laser structure using In solid sources. By using the independent or combined diffusion of Si and In from thin-film sources, it was deduced that In had a higher diffusion coefficient than Si and led to a similar degree of impurity-induced disordering. The degree of index guiding was tested by making excess-loss measurements in single-mode raised-cosine s-bends. It was found that structures which were patterned by SiO2/In disordering suffered excess losses which were similar to those in structures that were patterned with SiO2. An 0.26mm transition length for 3dB loss was measured for 1000nm-wide guides with 0.1mm guide offsets. This corresponded to a lateral index of refraction difference of between 0.8 and 1.0%. There was no evidence for an increased linear loss due to the presence of a dilute InGaAs alloy at a measurement wavelength of 870nm.

T.K.Tang, J.J.Alwan, C.M.Herzinger, T.M.Cockerill, A.Crook, T.A.DeTemple, J.J.Coleman, J.E.Baker: Applied Physics Letters, 1991, 59[22], 2880-2