Monte Carlo simulation was used to model the enhanced disordering of AlGaAs-based interfaces in the presence of high concentrations of Te atoms. The model was based upon the experimental finding that the thermal interdiffusion process was similar to the self-diffusion of Ga in GaAs. The model agreed well with experimental data for both Ga self-diffusion and for intermixing. The intermixing was found to be caused by the enhanced solubility of Ga vacancy acceptors in the presence of donor Te atoms, and not by diffusion of the Te atoms. The activation energy for the process was found to be about 2.7eV.

K.B.Kahen: Applied Physics Letters, 1988, 53[21], 2071-3