The diffusion of Zn was studied by using liquid-phase epitaxy methods, and Si-doped n-type substrate material. The measurements were carried out at 850C, and dopant concentrations which ranged from 1018 to 1019/cm3 were introduced. It was found that the Zn concentration in the solid depended upon the square root of the atomic fraction of Zn in the liquid. The diffusivity was dominated by the interstitial-substitutional process, and exhibited a cubic dependence upon the Zn content. The Zn interstitial was mainly doubly-ionized Zni2+. It was noted that Al played the role of a catalyst in the diffusion process. The Zn diffusion coefficient in Al0.85Ga0.15As was some 4 times greater than that in GaAs.

C.Algora, G.L.Araujo, A.Marti: Journal of Applied Physics, 1990, 68[6], 2723-30