The use of thin Si films for the selective-area diffusion of Si and Zn was described. It was found that Si films behaved as ideal masks for Zn diffusion at temperatures below 750C. Ideal lateral Zn diffusion profiles were also observed when using these films; regardless of the stress at the interface.

G.A.Vawter, E.Omura, X.S.Wu, J.L.Merz, L.Coldren, E.Hu: Journal of Applied Physics, 1988, 63[11], 5541-7